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US 7,396,755 B2Granted
Process and integration scheme for a high sidewall coverage ultra-thin metal seed layer
AssigneeTexas Instruments Incorporated
InventorAsad M. Haider
Life of this patent
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Abstract
The present invention provides a method of forming a metal seed layer 100. The method includes physical vapor deposition of seed metal 200 within an opening 140 located in a dielectric layer 135 of a substrate 110. The method also includes a RF plasma etch of the seed metal 200 deposited in the opening 140 simultaneously with conducting the physical vapor deposition of the seed metal 200.
Claims18
A method of forming a metal seed layer, comprising:
- physical vapor deposition of a metal within an opening located in a dielectric layer of a substrate;
- and
- a radiofrequency (RF) plasma etch of said metal deposited in said opening simultaneously with conducting said physical vapor deposition of said metal wherein said simultaneous physical vapor deposition and RF plasma etch corresponds to a ratio of rates of physical vapor depositing to RF plasma etching ranging from greater than about 1:1 to about 15:1.
A method of manufacturing an integrated circuit comprising:
- forming a microelectronic device on a substrate;
- forming a dielectric layer over said microelectronic device;
- forming an interconnect metal seed layer in an opening in said dielectric layer comprising:
- physical vapor deposition of a metal within said opening;
- and
- a radiofrequency (RF) plasma etch of said metal deposited in said opening simultaneously with conducting said physical vapor deposition of said metal wherein said simultaneous physical vapor deposition and RF plasma etch corresponds to a ratio of rates of physical vapor deposition to RF plasma etching ranging from greater than about 1:1 to about 15:1.
3 more elements
Dependencies are inferred from the claim text.