Method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsKi Lyoung Lee, Keun Do Ban, Sa Ro Han Park
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask as well as an anti-reflection film to reduce contact resistance, prevent reduction of a line-width of a lower interlayer insulating film and eliminate processes for depositing the interlayer insulating film and a polysilicon layer and etching the polysilicon layer to reduce a production period and cost of products.
Claims17
A method for manufacturing a semiconductor device, the method comprising:
- forming an insulating film over a semiconductor substrate including a gate and a bit line;
- etching the insulating film to form a first insulating film pattern having a height of using a contact mask for a storage node;
- forming a hard mask layer over a resulting structure including the first insulating film pattern, the hard mask layer being configured to be an etch stop layer and an anti-reflective layer;
- forming a photoresist pattern over the hard mask layer using the contact mask for the storage node;
- etching the hard mask layer and the first insulating film pattern, the first insulating film pattern to have a step, thereby defining a second insulating film pattern;
- removing the photoresist pattern and the hard mask layer to expose the second insulating film pattern, the second insulating film pattern defining a thorough hole that exposes the bit line;
- forming a spacer on a sidewall of the second insulating film pattern;
- and
- forming a storage node contact plug within the thorough hole.
A method for manufacturing a semiconductor device, the method comprising:
- forming an insulating layer over a semiconductor substrate including a gate and a bit line;
- etching the insulating layer to form a first insulating pattern having a first height;
- forming a mask layer over the first insulating pattern, the mask layer configured to be an etch stop layer and an anti-reflective layer;
- forming a mask pattern over the mask layer;
- etching the hard mask layer and the first insulating pattern, so that the first insulating pattern is provided with a step, thereby defining a second insulating film pattern;
- removing the mask pattern and the mask layer, so that the second insulating pattern defines a thorough hole;
- and
- forming a contact plug within the thorough hole.
Dependencies are inferred from the claim text.