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US 7,396,745 B2Granted
Formation of ultra-shallow junctions by gas-cluster ion irradiation
AssigneeTEL Epion Inc.
InventorsJohn O. Borland, John J. Hautala, Wesley J. Skinner
Life of this patent
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Abstract
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
Claims35
A method for forming one or more doped regions in a semiconductor substrate, comprising the steps of:
- maintaining a reduced-pressure environment around a substrate holder for holding a semiconductor substrate having a surface;
- holding the semiconductor substrate securely within said reduced-pressure environment;
- providing to said reduced-pressure environment a gas-cluster ion beam formed from a pressurized gas mixture including an inert gas and at least one dopant atom species;
- accelerating the gas-cluster ion beam;
- and
- irradiating the accelerated gas cluster ion beam onto one or more portions of the surface of the semiconductor substrate to form one or more doped semiconductor regions within the substrate.
3 more elements
A method for redistributing the dopant atoms in a doped semiconductor region at or near the surface of a semiconductor substrate, the dopant atoms having an initially peaked concentration distribution, comprising the steps of:
- maintaining a reduced-pressure environment around a substrate holder for holding a semiconductor substrate having a surface;
- holding the semiconductor substrate securely within said reduced-pressure environment;
- providing to said reduced-pressure environment a gas-cluster ion beam formed from a pressurized gas including at least one noble gas;
- accelerating the gas-cluster ion beam;
- irradiating the accelerated gas cluster ion beam onto one or more portions of the doped semiconductor regions at or near the surface of the semiconductor substrate;
- and
- redistributing dopant atoms in the doped semiconductor region.
4 more elements
Dependencies are inferred from the claim text.