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OwnerKaushal K. Singh, David Carlson +3inventors
InventorsKaushal K. Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
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A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
A method of epitaxially growing a silicon-containing film on a surface, which surface enables epitaxial growth of a silicon-containing film having a desired structure, said film growing method comprising the use of a lamp facing said surface to provide radiation having a wavelength ranging from about 310 nm to about 120 nm on said on which said silicon containing film is grown, in the processing volume in which said film growing method is carried out, where the power density of said radiation is at least 1 mW/cm2, to 25 mW/cm2, and wherein said film-growing method is carried out at a temperature ranging between about 500° C. and about 750° C., at a pressure ranging between about 1 Torr and about 80 Torr.
A method of epitaxially growing a silicon-germanium film on a surface, where the surface enables epitaxial growth of a silicon-germanium film having a desired structure, said film growing method comprising the use of a lamp facing said surface to provide radiation having a wavelength ranging from about 310 nm to about 120 nm on said surface on which said silicon-germanium film is grown, in the processing volume in which said film growing method is carried out where the power density of said radiation ranges from about 1 mW/cm2 to about 25 mW/cm2, and wherein said film-growing method is carried out at a temperature ranging between about 500° C. and about 750° C., at a pressure ranging between about 1 Torr and about 80 Torr.
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