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US 7,396,729 B2Granted
Methods of forming semiconductor devices having a trench with beveled corners
AssigneeSamsung Electronics Co., Ltd.
InventorsChul Jeong, Wook-Hyoung Lee
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Abstract
A semiconductor device is formed by providing a substrate. A trench is formed in the substrate. Beveled surfaces are formed at upper portions of sidewalls of the trench opposite a bottom surface of the trench, respectively. An oxide layer is formed in the trench such that the oxide layer is thicker on the beveled surfaces of the trench than on other surfaces of the trench.
Claims29
A method of forming a semiconductor device, comprising:
- providing a substrate;
- forming a trench in the substrate;
- forming beveled surfaces at upper portions of sidewalls of the trench opposite a bottom surface of the trench, respectively;
- and
- forming an oxide layer in the trench under an ambient comprising O2− and NOx− such that the oxide layer is thicker on the beveled surfaces of the trench than on other surfaces of the trench.
2 more elements
A method of forming a semiconductor device, comprising:
- sequentially stacking a pad oxide pattern and a mask pattern on a semiconductor substrate to expose the substrate;
- using the mask pattern as an etch mask, patterning the exposed substrate to form a trench;
- partially removing a corner of the substrate contacting the end of the pad oxide pattern at an upper end of the trench to form a facet region;
- performing an ion implanting process on the facet region to make defects;
- performing an oxidation process under an ambient comprising O2− and NOx− to form a thick oxide layer on the facet region;
- and
- filling the trench with a field isolation material.
4 more elements
A method of forming a semiconductor device, comprising:
- stacking a pad oxide layer and a mask layer on a semiconductor substrate;
- patterning the mask layer and the pad oxide layer to form a pad oxide pattern and a mask pattern, which are sequentially stacked on the substrate, and to expose the substrate;
- performing an oxidation process for the exposed substrate to form an oxide layer on the exposed substrate and to simultaneously form a thick pad oxide layer below lateral ends of the mask pattern;
- using the mask pattern as an etch mask, patterning the oxide layer and the substrate to form a trench;
- performing an oxidation process for the substrate including the trench to oxidize a corner of the substrate contacting the end of the pad oxide pattern;
- performing an etch process to remove the oxidized corner and form a facet region;
- performing an ion implanting process on the facet region to make defects;
- performing an oxidation process to form a thick oxide layer on the facet region;
- and
- filling the trench with a field isolation material.
7 more elements
Dependencies are inferred from the claim text.