Method of fabricating a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsIsao Kamioka, Yoshio Ozawa
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Abstract
According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a first conductive layer on the first insulating film; forming a second insulating film on the first conductive layer in a first processing chamber isolated from an outside; performing a modification process on the second insulating film in the first processing chamber, and unloading the semiconductor substrate from the first processing chamber to the outside; annealing the second insulating film in a second processing chamber; and forming a second conductive layer on the second insulating film.
Claims18
A semiconductor device fabrication method comprising:
- forming a first insulating film on a semiconductor substrate;
- forming a first conductive layer on the first insulating film;
- forming a second insulating film on the first conductive layer in a first processing chamber isolated from an outside;
- performing a modification process on the second insulating film in the first processing chamber, and unloading the semiconductor substrate from the first processing chamber to the outside;
- annealing the second insulating film in a second processing chamber;
- forming a second conductive layer on the second insulating film;
- and
- patterning the first conductive layer and first insulating film, and etching to remove an exposed portion of the semiconductor substrate by a predetermined depth, thereby forming a trench such that a width of a projecting portion formed in a surface portion of the semiconductor substrate is not more than 100 nm.
A semiconductor device fabrication method comprising:
- forming a first insulating film on a semiconductor substrate;
- forming a first conductive layer on the first insulating film;
- forming a second insulating film on the first conductive layer in a first processing chamber isolated from an outside;
- performing a modification process on the second insulating film in the first processing chamber, and unloading the semiconductor substrate from the first processing chamber to the outside;
- annealing the second insulating film in a second processing chamber;
- and
- forming a second conductive layer on the second insulating film;
- wherein when the first conductive layer is formed, the first conductive layer whose impurity concentration is not less than 1.0.×.1020/cm3 is formed.
Dependencies are inferred from the claim text.