Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

A method of forming an HfON film using atomic layer deposition, the method comprising performing a plurality of cycles one after another, each cycle comprising, in order:

• (a) supplying an Hf precursor selected from the group consisting of Hf[N(CH3)2] and Hf[N(C2H5)CH3]4 to a semiconductor substrate disposed in a reactor, and then purging the reactor;
• (b) subsequent to step (a), supplying an oxidizer to the semiconductor substrate, and then purging the reactor;
• and
• (c) subsequent to step (b), supplying a reaction source selected from the group consisting of NH3 gas, N2O gas, NO gas, and NH3 plasma to the semiconductor substrate, and then purging the reactor;
• and
• (d) subsequent to step (c), supplying an oxidizer and purging the reactor.