Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well
AssigneeDongguk University Industry-Academic Cooperation Foundation
InventorsHwa-Mok Kim, Tae-Won Kang, Kwan-Soo Chung
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Abstract
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.
Claims8
A method for manufacturing a light emitting diode (LED), comprising:
- forming a plurality of first-conductive type GaN nanorods in an array perpendicular to a substrate;
- forming an InGaN quantum well on each first-conductive type GaN nanorod;
- forming a second-conductive type GaN nanorod on each InGaN quantum well;
- forming an electrode pad for applying voltage to the first-conductive type GaN nanorods;
- and
- forming a transparent electrode to be commonly connected to the second-conductive type GaN nanorods for supplying voltage thereto.
Dependencies are inferred from the claim text.