Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition

A chemically amplified resist composition comprising:

• a photo acid generator;
• a quencher;
• and
• a salt having a buffering function for an acid which is generated from said acid generator by irradiation, wherein,
• said salt having the buffering function for the acid generated from said acid generator is specifically a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound, being expressed by the Formula (1a):
• wherein each R independently represents a hydrogen atom or a straight, branched or cyclic alkyl or alkoxy group containing from 1 to 4 carbons with or without substitution;
• n is 0 or 1;
• k is an integer of 0 to 4;
• mm is an integer of 3 to 11;
• p is an integer of 1 to 3;
• side chains Y each independently represent a hydrogen atom or a straight, branched or cyclic alkyl group containing from 1 to 20 carbons, which may comprise an ether bond or a hydroxyl group;
• chains X can be identical or different and each expressed by one of the Formulae (X)-1 to (X)-3;
• and may combine with each other to form a ring:
• R300, R302 and R305 are each a straight or branched alkylene group containing from 1 to 4 carbons;
• R301 and R304 are each a hydrogen atom or a straight, branched or cyclic alkyl group containing from 1 to 20 carbons, which may comprise one or more hydroxy groups, ether bonds, ester bonds and/or lactone rings;
• R303 is a straight or branched single bond alkylene group containing from 1 to 4 carbons;
• and R306 is a straight, branched or cyclic alkyl group containing from 1 to 20 carbons, which may comprise one or more hydroxy groups, ether bonds, ester bonds and/or lactone rings.

A chemically amplified resist composition comprising:

• at least a photo acid generator;
• a quencher;
• and
• a salt having a buffering function for an acid which is generated from said acid generator by irradiation, wherein,
• said salt having the buffering function for the acid generated from said acid generator is specifically a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound, being expressed by the Formula (1b):
• wherein each R independently represents a hydrogen atom or a straight, branched or cyclic alkyl or alkoxy group containing from 1 to 4 carbons with or without substitution;
• n is 0 or 1;
• k is an integer of 0 to 4;
• mm is an integer of 3 to 11;
• R307 is a straight or branched alkylene group containing from 2 to 20 carbons, which may comprise one or more carbonyl bonds, ether bonds, ester bonds, sulfide bonds, sulfinyl bonds and/or sulfonyl bonds;
• and X is expressed by one of the Formulae (X)-1 to (X)-3:

A chemically amplified resist composition comprising:

• a photo acid generator;
• a quencher;
• and
• a buffering salt for an acid generated from said photo generator by irradiation, said buffering salt of the Formula (1):
• wherein, m is an integer of 3 to 23;
• n is 1;
• k is an integer of 0 to 4;
• each R independently represents a hydrogen atom or a straight, branched or cyclic alkyl or alkoxy group containing from 1 to 4 carbons with or without substitution;
• I is an integer of 1 to 3;
• and B is any one of primary, secondary and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds with a carboxy group, nitrogen-containing compounds with a sulfonyl group, nitrogen-containing compounds with a hydoxy group, nitrogen-containing compounds with a hydroxyphenyl group, alcoholic nitrogen-containing compounds, nitrogen-containing compounds with a cyano group, amide derivatives, imide derivatives and nitrogen-containing compounds comprising one or more oxygen atom.

A chemically amplified resist composition comprising:

• a photo acid generator;
• a quencher;
• and
• a buffering salt for an acid generated from said acid generator by irradiation and of the Formula 1(a):
• wherein, mm is an integer of 3 to 11;
• n is 0 or 1;
• k is an integer of 0 to 4;
• p is an integer of 1 to 3;
• R each independently represent a hydrogen atom or a straight, branched or cyclic alkyl or alkoxy group containing from 1 to 4 carbons with or without substitution;
• Y each independently represent a hydrogen atom or a straight, branched or cyclic alkyl group containing from 1 to 20 carbons, which may comprise an ether bond or a hydroxyl group;
• X each independently represent one of Formulae (X)-1 to (X)-3:
• wherein, Xs may combine with each other to form a ring;
• R300, R302 and R305 are each a straight or branched alkylene group containing from 1 to 4 carbons;
• R301 and R304 are each a hydrogen atom or a straight, branched or cyclic alkyl group containing from 1 to 20 carbons, which may comprise one or more hydroxy groups, ether bonds, ester bonds and/or lactone rings;
• R303 is a straight or branched single bond alkylene group containing from 1 to 4 carbons;
• and R306 is a straight, branched or cyclic alkyl group containing from 1 to 20 carbons, which may comprise one or more hydroxy groups, ether bonds, ester bonds and/or lactone rings.