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US 7,396,475 B2Granted
Method of forming stepped structures employing imprint lithography
AssigneeMolecular Imprints, Inc.
InventorSidlgata V. Sreenivasan
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Abstract
The present invention provides a method for forming a stepped structure on a substrate that features transferring, into the substrate, an inverse shape of the stepped structure disposed on the substrate.
Claims25
A method of forming a stepped-structure on a substrate, said method comprising:
- forming, on said substrate, a multi-tiered structure including a patterned layer having protrusions and recessions, and an etch selectivity layer, with said patterned layer being disposed between said substrate and said etch selectivity layer, with regions of said substrate in superimposition with said recessions being spaced-apart from said etch selectivity layer;
- forming a hard mask in areas of said multi-tiered structure in superimposition with said recessions;
- and
- removing, selectively, portions of said multi-tiered structure to expose regions of said substrate in superimposition with said protrusions to form said stepped structure.
1 more element
A method of forming a stepped-structure on a substrate, said method comprising:
- creating a multi-layered structure by forming, on said substrate, a multi-tiered patterned layer having protrusions and recessions, and forming, upon said patterned layer, an etch selectivity layer, with regions of said substrate in superimposition with said recessions being spaced-apart from said etch selectivity layer, said multi-layered structure having a crown surface facing away from said substrate;
- and
- selectively removing portions of said multi-layered structure to expose regions of said substrate in superimposition with said protrusions forming, in said substrate, a via portion and a trench portion.
A method of forming a stepped-structure on a substrate, said method comprising:
- forming, on said substrate, a multi-tiered structure including a patterned layer having protrusions and recessions, and an etch selectivity layer, with said patterned layer being disposed between said substrate and said etch selectivity layer, with regions of said substrate in superimposition with said recessions being spaced-apart from said etch selectivity layer;
- and
- removing, selectively, portions of said multi-tiered structure to expose regions of said substrate in superimposition with said protrusions to form said stepped structure having a via portion and a trench portion, with dimensions of said via portion being established as a function of dimension of said protrusions and dimensions of said trench portion being established as a function of dimensions of said recessions.
Dependencies are inferred from the claim text.