Apparatus for manufacturing single crystal
AssigneesDenso Corporation, National Institute of Advanced Industrial Science and Technology
InventorsTomohisa Kato, Shinichi Nishizawa, Fusao Hirose
Life of this patent
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Abstract
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.
Claims14
An apparatus for manufacturing a single crystal, the apparatus comprising:
- a seed crystal;
- a reactive chamber for flowing a raw material gas so that the singe crystal grows from the seed crystal disposed in the reactive chamber;
- a gas flow control member for controlling the raw material gas to flow toward the seed crystal from a raw material;
- and
- a gas passage disposed between the reactive chamber and the gas flow control member,
- wherein the gas flow control member surrounds the seed crystal through a clearance,
- wherein the clearance is capable of passing the raw material gas therethrough,
- wherein the gas passage is capable of flowing a part of the raw material gas to bypass the seed crystal,
- wherein the gas flow control member includes a tapered cylinder which has an inner diameter,
- wherein the inner diameter of the tapered cylinder is configured to increase as it approaches the raw material,
- wherein the tapered cylinder is spaced apart from the seed crystal by a predetermined distance, and
- wherein the gas passage is disposed outside of the tapered cylinder.
An apparatus for manufacturing a single crystal, the apparatus comprising:
- a seed crystal;
- a reactive chamber for flowing a raw material gas so that the single crystal grows from the seed crystal disposed in the reactive chamber;
- a gas flow control member for controlling the raw material gas to flow toward the seed crystal from a raw material;
- and
- a through hole disposed in the gas flow control member,
- wherein the gas flow control member surrounds the seed crystal through a clearance,
- wherein the clearance is capable of passing the raw material gas therethrough,
- wherein the through hole is capable of flowing a part of the raw material gas to bypass the seed crystal,
- wherein the gas flow control member includes a tapered cylinder, which has an inner diameter,
- wherein the inner diameter of the tapered cylinder is configured to increase as it approaches the raw material,
- wherein the tapered cylinder is spaced apart from the seed crystal by a predetermined distance, and
- wherein the though hole is disposed at an outside of the gas flow control member.
Dependencies are inferred from the claim text.