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US 7,396,410 B2Granted
Featuring forming methods to reduce stacking fault nucleation sites
AssigneeCree, Inc.
InventorsChrister Hallin, Heinz Lendenmann
Life of this patent
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Abstract
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.
Claims18
A method of fabricating an epitaxial silicon carbide layer comprising:
- forming a plurality of features in a surface of a silicon carbide substrate having an off-axis orientation toward a predetermined crystallographic direction, the plurality of features having a width-to-depth ratio of at least 5:1 and including at least one sidewall that is oriented nonparallel to the predetermined crystallographic direction and having a depth less than about 1 μm;
- and
- growing the epitaxial silicon carbide layer on the surface of the silicon carbide substrate that includes the plurality of features therein.
A method of fabricating an epitaxial layer comprising:
- forming a plurality of features in a surface of a monocrystalline substrate having an off-axis orientation toward a predetermined crystallographic direction, the plurality of features having a width-to-depth ratio of at least 5:1 and including at least one sidewall that is oriented nonparallel to the predetermined crystallographic direction and having a depth less than about 1 μm;
- and
- growing the epitaxial layer on the surface of the monocrystalline substrate that includes the plurality of features therein.
Dependencies are inferred from the claim text.