Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates

A method for forming a hybrid orientation substrate comprising

• forming a direct-silicon-bonded (DSB) bilayer comprising a single-crystal Si layer having a (100) surface orientation directly bonded to a single-crystal Si layer having a (110) surface orientation, said layers oriented in such a manner so as to have one of the (100) layer's in-plane <100> directions aligned with the (110) layer's in-plane <100> direction;
• selecting a plurality of first Si bilayer regions and a plurality of second Si bilayer regions, wherein said (110)-oriented Si in said first bilayer regions will retain their original (110) surface orientation and said (110)-oriented Si in said second bilayer regions will undergo an orientation change to a (100) surface orientation in said second bilayer regions;
• forming tench isolation around said first and second Si bilayer regions to produce isolation-bordered first and second Si bilayer regions having edges aligned along the (100) layer's in-plane <100> directions;
• amorphizing the entirety of said (110)-oriented layer in said second Si bilayer regions to form localized amorphized regions while leaving at least some of said (100)-oriented layer in said second Si bilayer regions crystalline;
• and
• recrystallizing said localized amorphized regions using said crystalline regions of said (100)-oriented layer in said second Si bilayer regions as a template, thereby changing the orientation of said localized amorphized regions from their original (110) surface orientation to a (100) surface orientation.