Single crystal semiconductor manufacturing apparatus and method

A single crystal semiconductor manufacturing apparatus for manufacturing a single crystal semiconductor by heating a melt in a crucible by heating means, contacting an impurity-added seed crystal with the melt, and pulling up the seed crystal, wherein:

• a plurality of adjusting means for independently adjusting an amount of heat applied to the crucible disposed, and
• the melt is adjusted by the plurality of adjusting means and a horizontal magnetic field is applied to the melt so that the seed crystal is heated by radiant heat and so that, when the seed crystal is contacted with the melt, a temperature difference between the seed crystal and the melt becomes not larger than an allowable temperature difference not causing dislocation in the seed crystal.

A single crystal semiconductor manufacturing method for manufacturing a single crystal semiconductor by heating a melt in a crucible, contacting an impurity-added seed crystal with the melt, and pulling up the seed crystal, comprising the steps of:

• heating the melt and applying a horizontal magnetic field to the melt so that the seed crystal is heated by radiant heat and so that, when the seed crystal is contacted with the melt, a temperature difference between the seed crystal and the melt becomes not larger than an allowable temperature difference and does not cause dislocation in the seed crystal.

A single crystal semiconductor manufacturing method for manufacturing a single crystal semiconductor by heating a melt in a crucible, contacting an impurity-added seed crystal with the melt and pulling up the seed crystal comprising the steps of:

• Heating the melt and applying a horizontal magnetic field to the melt before the seed crystal is contacted with the melt so that the seed crystal is heated by radiant heat and so that, when the seed crystal is contacted with the melt, a temperature difference between the seed crystal and the melt becomes not larger than an allowable temperature difference and does not cause dislocation in the seed crystal.