Backside method for fabricating semiconductor components with conductive interconnects

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a backside, a first contact on the circuit side having an inner surface, and a second contact on the backside;
• forming a substrate opening in the semiconductor substrate from the backside to the inner surface of the first contact;
• and
• forming a conductive interconnect from the back side on the inner surface of the first contact and on the second contact using a bonding capillary, the conductive interconnect comprising a wire having a first bonded connection on the inner surface and a second bonded connection on the second contact and forming a dielectric encapsulant on the backside encapsulating at least a portion of the conductive interconnect.

A method for fabricating a semiconductor component comprising:

• providing a semiconductor substrate having a circuit side, a backside, a first contact on the circuit side having an inner surface, and a second contact on the backside;
• forming a substrate opening in the semiconductor substrate from the backside to the inner surface of the first contact;
• and
• forming a conductive interconnect from the back side on the inner surface of the first contact and on the second contact, the conductive interconnect comprising a wire having a first bonded connection on the inner surface and a second bonded connection on the second contact, the first bonded connection comprising a ball bond and the second bonded connection comprising a wedge bond;
• and forming a dielectric encapsulant on the backside encapsulating at least a portion of the conductive interconnect.

A method for fabricating a stacked semiconductor component comprising:

• providing a first semiconductor component having a circuit side, a backside, a contact on the circuit side having an inner surface, and an opening extending from the circuit side to the backside;
• forming a conductive interconnect on the first semiconductor component using a bonding capillary, the conductive interconnect comprising a wire in the opening having a bonded connection on the inner surface of the contact;
• and
• bonding a second semiconductor component to the first semiconductor component by forming a second bonded connection between the conductive interconnect and a second substrate contact on the second semiconductor component;
• and forming a dielectric encapsulant on the backside encapsulating at least a portion of the conductive interconnect.

A method for fabricating a semiconductor component comprising:

• providing a bonding capillary configured to wire bond a wire;
• providing a semiconductor substrate having a circuit side, a backside, an integrated circuit, and a substrate contact on the circuit side in electrical communication with the integrated circuit having an inner surface;
• forming an opening in the semiconductor substrate from the backside to the inner surface of the substrate contact;
• and
• forming a conductive interconnect in the opening using the bonding capillary, the conductive interconnect comprising the wire and a bonded connection between the wire and the inner surface;
• and forming a dielectric encapsulant on the backside encapsulating at least a portion of the conductive interconnect.