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US 7,391,121 B2Granted
Semiconductor device with a number of bonding leads and method for producing the same
AssigneeInfineon Technologies AG
InventorRalf Otremba
Life of this patent
Estimating the term…
Abstract
A semiconductor device (7) has a number of bonding leads (1, 2, 3) with more than one individual bonding lead (1) being arranged on an individual contact area (4) of a semiconductor chip (5) or a wiring component (6) of the semiconductor device (7). The bonding leads (1, 2 and 3) of a stack (8) form ohmic transitions (12, 13) in their boundary layers. For this purpose, the stacked contact elements (9, 10) have different materials with a different material composition.
Claims24
A semiconductor device, comprising:
- a plurality of individual bonding leads each having a first end disposed on an individual contact area of a semiconductor chip and a second opposite end disposed on a wiring component of the semiconductor device,
- wherein the bonding leads form a stack of at least a first contact element and a second contact element arranged on top of the first contact element,
- a material of the first contact element comprises an ohmic contact transition with a material of the contact area,
- a material of the second contact element comprises an ohmic contact transition with the material of the first contact element arranged there under, and
- the materials of the first and second contact elements comprise different material compositions.
2 more elements
A semiconductor device comprising a number of bonding leads, wherein
- more than one individual bonding lead are arranged on an individual contact area of a semiconductor chip or a wiring component of the semiconductor device,
- the bonding leads form a stack of at least first and second contact elements arranged one on top of the other,
- the material of the lower, first contact element comprises an ohmic contact transition with the material of the contact area,
- the material of the stacked, second contact element comprises an ohmic contact transition with the material of the first contact element arranged there under,
- the materials of the first and second contact elements that are stacked one on top of the other and bonded comprise different material compositions, and
- wherein the different metal compositions are copper alloys, a harder one of the contact elements comprising at least one of Fe, Ni, P, Zn, Sn and Co as an alloying element.
3 more elements
A semiconductor device, comprising:
- a contact area of a semiconductor chip,
- a wiring component of the semiconductor device, and
- a plurality of bonding leads each electrically connecting the contact area and the wiring component,
- wherein
- the plurality of bonding leads form a stack of at least a first contact element and a second contact element arranged on top of the first contact element,
- a material of the first contact element comprises an ohmic contact transition with an underlying material,
- a material of the second contact element comprises an ohmic contact transition with the material of the first contact element arranged there under, and
- the materials of the first and second contact elements comprise different material compositions.
5 more elements
A semiconductor device, comprising:
- a plurality of individual bonding leads each having a first end disposed on an individual contact area of a semiconductor chip and a second opposite end disposed on a wiring component of the semiconductor device,
- wherein the bonding leads form a stack of at least a first contact element and a second arranged on top of the first contact element,
- a material of the first contact element comprises an ohmic contact transition with a material of the wiring component,
- a material of the second contact element comprises an ohmic contact transition with the material of the first contact element arranged there under, and
- the materials of the first and second contact elements comprise different material compositions.
2 more elements
Dependencies are inferred from the claim text.