US 7,387,811 B2Granted

Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD)

AssigneeSuperPower, Inc.

InventorVenkat Selvamanickam

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Abstract

A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

Claims4

Dependent claims

A method for substantially simultaneously processing multiple portions of at least one substrate or portions of multiple substrates or multiple portions of at least one substrate and portions of multiple substrates, the method comprising:

a) providing substantially simultaneously i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates to a reactor, the reactor including a precursor injector by which the i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates pass;
b) heating through at least one aperture of a first aperture guard the i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates, the first aperture guard being positioned between a heater and the i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates;
c) directing at least one temperature-regulated precursor from the precursor injector through at least one aperture of a second aperture guard at the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates;
and
d) depositing a film that is a precursor to superconducting film or a superconducting film onto the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates.

2 more elements

a) providing at least one precursor injector to a CVD apparatus configured to substantially simultaneously processing multiple portions of at least one substrate or portions of multiple substrates or multiple portions of at least one substrate and portions of multiple substrates;
b) providing substantially simultaneously i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates to the CVD apparatus;
c) heating through at least one aperture of a first aperture guard the i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates, the first aperture guard being positioned between and a heater the ii) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates;
d) mixing at least one precursor composition;
e) heating the mixed at least one precursor composition;
f) directing the heated and mixed at least one precursor through at least one aperture of a second aperture guard at the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates using the a precursor injector;
and
g) depositing a film that is a precursor to superconducting film or a superconducting film onto the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates.

5 more elements

Dependencies are inferred from the claim text.