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US 7,385,283 B2Granted
Three dimensional integrated circuit and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWeng-Jin Wu, Wen-Chih Chiou
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Abstract
A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal bond and a non-metal-to-non-metal bond.
Claims22
A three dimensional integrated circuit structure, comprising:
- at least first and second integrated circuit devices, each device comprising a substrate having an integrated circuit layer formed thereon, said first and second devices being bonded together in a stack,
- wherein each device includes at least one metal interconnect formed through at least a portion of its substrate and integrated circuit layer,
- wherein the bond between the first and second integrated circuit devices comprises a metal-to-metal melt bond between said metal interconnects and a non-metal-to-non-metal bond along an interface between adjacent surfaces of the devices.
A method of forming a three dimensional integrated circuit structure, comprising the following steps:
- providing at least first and second integrated circuit devices, each device comprising a substrate having an integrated circuit layer formed thereon and at least one metal interconnect formed through at least a portion of its substrate and integrated circuit layer;
- and
- bonding said first and second devices together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal melt bond between said metal interconnects and a non-metal-to-non-metal bond along an interface between adjacent surfaces of the devices.
A three dimensional integrated circuit structure, comprising:
- at least first and second integrated circuit dies, each die comprising a substrate having an integrated circuit formed thereon, said first and second dies being bonded together along an interface between adjacent surfaces thereof to form a stack,
- each die comprising at least one metal interconnect formed at least partially through the die,
- wherein the at least one metal interconnect of at least one of said dies is exposed through said substrate of said at least one die,
- wherein the bond between the first and second dies comprises a metal-to-metal melt bond between said interconnects and a non-metal-to-non-metal bond along said interface, whereby substantially the entire interface between said first and second devices is bonded.
1 more element
Dependencies are inferred from the claim text.