# US 7,382,224 B2 · Over-current protection device

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- Number: US 7,382,224 B2
- Document ID: US7382224B2
- Status: Granted
- Kind: B2
- Application number: 11/454,870
- Filed: 2006-06-19
- Published: 2007-02-15
- Granted: 2008-06-03
- Earliest claimed: 2005-08-11
- Assignees: Polytronics Technology Corp.
- Inventors: Shau Chew Wang; Fu Hua Chu; Kuo Chang Lo
- Web page: https://patentgrep.com/patent/US7382224B2

## CPC

- H01C 7/027: {consisting of conducting or semi-conducting material dispersed in a non-conductive organic material}
- H01C: RESISTORS

## Abstract

An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer. The PTC material layer is sandwiched between the two metal foils and comprises plural crystalline polymers with at least one polymer melting point below 115° C., and a non-oxide electrically conductive ceramic powder. The non-oxide electrically conductive ceramic powder exhibits a certain particle size distribution. The PTC material layer has a resistivity below 0.1 Ω-cm. The initial resistance of the device is below 20 mΩ, and the area of the PTC material layer is below 30 mm2. The over-current protection device exhibits a surface temperature below 100° C. under the trip state of over-current protection.

## Claims

### Claim 1

An over-current protection device, comprising:
two metal foils; and
a positive temperature coefficient (PTC) material layer sandwiched between the two metal foils, exhibiting a resistivity below 0.1 Ω-cm, and comprising:
a plurality of crystalline polymers, wherein at least one of the crystalline polymer exhibits a melting point below 115° C.; and
a non-oxide electrically conductive ceramic powder consisting essentially of the particle size from 0.1 μm to 10 μm and having a resistivity below 500 μΩ-cm, and dispersed in the crystalline polymers;
wherein the initial resistance of the over-current protection device is below 20 mΩ, the area of the PTC material layer is below 30 mm2, and the over-current protection device exhibits a surface temperature below 100° C. under the trip state of over-current protection.

### Claim 2 (depends on 1)

The over-current protection device of claim 1, wherein the thickness of the PTC material layer is larger than 0.2 mm.

### Claim 3 (depends on 1)

The over-current protection device of claim 1, which exhibits a resistance repeatability ratio below 3.

### Claim 4 (depends on 1)

The over-current protection device of claim 1, wherein the non-oxide electrically conductive ceramic powder is titanium carbide.

### Claim 5 (depends on 1)

The over-current protection device of claim 1, wherein the at least one crystalline polymer with the melting point below 115° C. comprises a low-density polyethylene.

### Claim 6 (depends on 1)

The over-current protection device of claim 1, further comprising a non-conductive inorganic filler.

### Claim 7 (depends on 6)

The over-current protection device of claim 6, wherein the non-conductive inorganic filler is magnesium hydroxide.

### Claim 8 (depends on 1)

The over-current protection device of claim 1, further comprising two metal electrode sheets connected to the two metal foils so as to form an assembly.

### Claim 9 (depends on 1)

The over-current protection device of claim 1, wherein the two metal foils are connected to a power source to form a conductive circuit loop.