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US 7,368,785 B2Granted
MOS transistor device structure combining Si-trench and field plate structures for high voltage device
AssigneeUnited Microelectronics Corp.
InventorsLi-Che Chen, Chih-Chong Wang
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Abstract
A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.
Claims18
A high voltage metal-oxide-semiconductor (HV MOS) transistor device, comprising:
- a first semiconductor region;
- a second semiconductor region;
- a long pass isolation arranged between the first semiconductor region and the second semiconductor region, the long pass isolation having a lower surface and an upper surface, wherein the lower surface is non-planar and in a shape of a plurality of protrusions;
- a plurality of field plates formed on or embedded in the long pass isolation;
- a gate dielectric layer formed on the first semiconductor region;
- and
- a gate formed on the gate dielectric layer and laterally extending onto the long pass isolation.
4 more elements
Dependencies are inferred from the claim text.