Method and apparatus for inspecting semiconductor device

A semiconductor inspection apparatus having a length measurement function for performing size measurement between a measurement start point and an end point of a scan image obtainable by scanning a focused electron beam on a wafer, said apparatus comprising:

• means for emitting a first electron beam with a first constant sustained angle of incidence with respect to a workpiece having a first energy capable of penetrating a part of a workpiece and reaching an unexposed portion;
• means for emitting a second electron beam with a second constant sustained angle of incidence with respect to the workpiece having a second energy capable of arriving only at a top surface of the workpiece at a same position as an irradiation position of said first electron beam with the first constant sustained angle of incidence having the first energy;
• means for using a first secondary signal generated by irradiation of said first electron beam with the first constant sustained angle of incidence having the first energy and a second secondary signal generated by irradiation of said second electron beam with the second constant sustained angle of incidence having the second energy to detect position information of an edge of a pattern to be inspected and a signal intensity;
• means for generating a stereoscopic model of the pattern to be inspected;
• means for using the detected information to calculate a feature quantity of the pattern being inspected;
• means for constructing a stereoscopic structure from the calculated feature quantity of the pattern;
• and
• means for displaying a three-dimensional structure of the stereoscopic structure thus constructed.

A semiconductor inspection apparatus having a length measurement function for performing size measurement between a length measurement start point and an end point of a scan image obtainable by scanning a focused electron beam on a wafer, said apparatus comprising:

• means for emitting an electron beam having an energy capable of penetrating a part of a workpiece and reaching an unexposed portion;
• deflection means for deflecting an incidence angle of said electron beam to generate an electron beam with a constant sustained angle of incidence with respect to the workpiece;
• means for generating a scan image based on said secondary signal generated from the workpiece by irradiation of the electron beam with the constant sustained angle of incidence;
• means for detecting, from a signal thus obtained, position information of a pattern to be inspected and a signal intensity;
• means for generating a stereoscopic model of the pattern to be inspected;
• means for using the detected position information and signal intensity along with a deflection angle of the electron beam to calculate a feature quantity of a shape of the pattern being inspected;
• means for constructing a stereoscopic structure from the calculated feature quantity of the pattern;
• and means for displaying a three-dimensional structure of the stereoscopic structure thus constructed.