Surface-emission semiconductor laser device
AssigneeFurukawa Electric Co., Ltd.
InventorsNoriyuki Yokouchi, Norihiro Iwai
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Abstract
A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.
Claims3
A method for fabricating a surface-emission semiconductor laser device comprising:
- consecutively forming on a p-type substrate a bottom multilayer reflector, a p-type cladding layer, an active layer structure for emitting laser, an n-type cladding layer and a top multilayer reflector;
- forming an n-side electrode on the n-type cladding layer, the n-side electrode forming step including forming a substantially uniform Au film on the n-type cladding layer, followed by forming an AuGeNi film or AuGe film on the Au film;
- and
- forming an alloy between the Au film and the AuGeNi film or AuGe film, wherein the top multilayer reflector includes a semi-insulating semiconductor or dielectric material.
A method for fabricating a surface-emission semiconductor laser device comprising:
- consecutively forming on a p-type substrate a bottom multilayer reflector, a p-type cladding layer, an active layer structure for emitting laser, an n-type cladding layer and a top multilayer reflector;
- forming a p-side electrode on the p-type cladding layer or the bottom multilayer reflector;
- forming an n-side electrode on the n-type cladding layer or the top multilayer reflector, the n-side electrode forming step including forming a substantially uniform Au film on the n-type cladding layer, followed by forming an AuGeNi film or AuGe film on the Au film;
- and
- forming an alloy between the Au film and the AuGeNi film or AuGe film, wherein the n-side electrode is formed on the n-type cladding layer, and the multilayer reflector includes a semi-insulating semiconductor or dielectric material.
A method for fabricating a surface-emission semiconductor laser device comprising:
- consecutively forming on a semiconductor substrate a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector;
- forming an n-side electrode on the n-type cladding layer or the bottom multilayer reflector;
- forming a p-side electrode on the p-type cladding layer or the top multilayer reflector, the n-side electrode forming step including forming a substantially uniform Au film on the n-type cladding layer, followed by forming an AuGeNi film or AuGe film on the Au film;
- and
- forming an alloy between the Au film and the AuGeNi film or AuGe film, wherein the p-side electrode is formed on the p-type cladding layer, and the multilayer reflector includes a semi-insulating semiconductor or dielectric material.
Dependencies are inferred from the claim text.