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US 7,365,346 B2Granted
Ion-implanting apparatus, ion-implanting method, and device manufactured thereby
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYuichiro Sasaki, Bunji Mizuno
Life of this patent
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Abstract
An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring device.
Claims22
An ion-implanting apparatus comprising:
- an ion source for generating an ion beam, said ion source having an arc chamber including an ion outlet;
- a beam current measuring device for measuring a current value of the ion beam, said beam current measuring device including a sensor sensitive to magnetic flux;
- and
- a control system for controlling the current value of the ion beam to be a constant or predetermined value by using the current value, as measured by said beam current measuring device, to control a shape of said ion outlet or a position of said arc chamber.
1 more element
An active device and a passive device, both manufactured by an ion-implanting apparatus comprising:
- an ion source for generating an ion beam, said ion source having an arc chamber including an ion outlet;
- a beam current measuring device for measuring a current value of the ion beam, said beam current measuring device including a sensor sensitive to magnetic flux;
- and
- a control system for controlling a variation in the current value of the ion beam by using the current value, as measured by said beam current measuring device, to control a parameter selected from the group consisting of a shape of said ion outlet, a position of an extracting electrode, a dopant gas flow, a dopant gas pressure, a current and voltage applied to a filament, an arc voltage, an arc current, magnetic field strength for trapping an electron inside of said arc chamber, and a position of said arc chamber.
1 more element
An ion-implanting method comprising:
- using a beam current measuring device to measure a current value of an ion beam generated by an ion source having an arc chamber including an ion outlet, said beam current measuring device including a sensor sensitive to magnetic flux;
- and
- controlling the current value of said ion beam to be a constant or predetermined value by using the current value, as measured by said beam current measuring device, to control a shape of said ion outlet or a position of said arc chamber.
Dependencies are inferred from the claim text.