Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
AssigneeAdvanced Tehnology Materials, Inc.
InventorsElizabeth L. Walker, Jeffrey A. Barnes, Shahriar Naghshineh, Kevin P. Yanders
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Abstract
A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.
Claims14
A cleaning composition for cleaning microelectronic substrates, consisting of:
- 0.30 to 22.0% by weight alkanolamine;
- 0.02 to 13.5% by weight tetramethylammonium hydroxide;
- balance water,
- wherein the alkanolamine is selected from the group consisting of 1-amino-2 propanol, 2-(methylamino)ethanol and mixtures thereof, and wherein the cleaning composition is useful for removing residue from a microelectronic substrate having same thereon.
A cleaning composition for cleaning microelectronic substrates consisting of:
- 0.09 to 22.0% by weight alkanolamine;
- 0.02 to 13.5% by weight tetrabutylammonium hydroxide;
- balance water,
- wherein the alkanolamine is selected from the group consisting of monoethanolamine, 1-amino-2 propanol, 2-(methylamino)ethanol, triethanolamine and mixtures thereof.
Dependencies are inferred from the claim text.