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AssigneeShin-Etsu Quartz Products Co., Ltd.
InventorsTatsuhiro Sato, Nobumasa Yoshida, Mamoru Endo
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As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
A quartz glass used for a plasma reaction apparatus for producing a semiconductor, said quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising a first metallic element having at least one type of metallic element selected from Group 3B of the periodic table and a second metallic element having at least one type of metallic element selected from the group consisting of Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids wherein each metallic element of said second metallic elements has a maximum concentration of 2.0 wt % or less.
A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising a first metallic element having at least one type of metallic element selected from Group 3B of the periodic table and a second metallic element having at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids, wherein each metallic element of said second metallic element has a maximum concentration of 2.0 wt % or less,
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