Semiconductor device-based sensors
AssigneeNitronex Corporation
InventorsJerry W. Johnson, Edwin L. Piner, Kevin J. Linthicum
Life of this patent
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Abstract
Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.
Claims15
A FET-based chemical sensor designed to detect a chemical species comprising:
- a semiconductor material region comprising a gallium nitride material layer;
- a source electrode formed on the semiconductor material region;
- a drain electrode formed on the semiconductor material region;
- a gate electrode formed on the semiconductor material region;
- and
- a sensing region comprising the gallium nitride material layer and a sensing electrode, laterally separated from the gate electrode, and capable of interacting with the chemical species to change a measurable property of the chemical sensor.
Dependencies are inferred from the claim text.