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US 7,361,883 B2Granted
Photonic mixer device
AssigneePMD Technologies GmbH
InventorsZhanping Xu, Tobias Möller, Holger Kraft, Jochen Frey, Martin Albrecht
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AssigneePMD Technologies GmbH
InventorsZhanping Xu, Tobias Möller, Holger Kraft, Jochen Frey, Martin Albrecht
Estimating the term…
The present invention relates to a photonic mixer device with a photosensitive layer, at least two modulation gates (3, 4, 103, 104, 203, 204, 303, 304, 403, 404) and at least two readout electrodes (1, 2, 101, 102, 201, 202, 301, 302, 401, 402, 501, 502, 601, 602) connected to the photosensitive layer, the modulation gates (3, 4, 103, 104, 203, 204, 303, 304, 403, 404) being able to be connected to a modulation device which raises and lowers the potential of the modulation gates relative to one another and relative to the preferably constant potential of the readout electrodes corresponding to a desired modulation function. In order to further develop the known photonic mixer device such that it shows an increased charge conversion efficiency and reduced dark currents, it is proposed according to the invention that the readout electrodes (1, 2, 101, 102, 201, 202, 301, 302, 401, 402, 501, 502, 601, 602) in each case have at least two discrete electrode sections (1A-1E, 2A-2E) arranged at a distance alongside each other.
Photonic mixer device for receiving incident electromagnetic radiation includes a photosensitive layer (105) responsive to the incident electromagnetic radiation, at least two modulation gates (3, 4, 103, 104, 203, 204, 303, 304, 403, 404) and at least two readout electrodes (1, 2, 101, 102, 201, 202, 301, 302, 401, 402, 501, 502, 601, 602) connected to the photosensitive layer, the modulation gates (3, 4, 103, 104, 203, 204, 303, 304, 403, 404) being able to be connected to a modulation device which raises and lowers the potential of the modulation gates relative to one another and relative to a constant potential of the readout electrodes corresponding to a desired modulation function, characterized in that the readout electrodes (1, 2, 101, 102, 201, 202, 301, 302, 401, 402, 501, 502, 601, 602) each have at least two discrete electrode sections (1A-1E, 2A-2E) arranged at a distance alongside each other, characterized in that at least two memory gates (323, 324) are provided which surround the readout electrodes (301, 302).
Dependencies are inferred from the claim text.