Photoresist polymer and photoresist composition containing the same
AssigneeHynix Semiconductor Inc.
InventorJae Chang Jung
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Abstract
Photoresist polymers and photoresist compositions containing the same. Photoresist patterns of less than 50 nm are achieved with EUV (Extreme Ultraviolet) as an exposure light source with photoresist compositions comprising (i) a photoresist polymer comprising a polymerization repeating unit of Formula 2 or (ii) a photoresist polymer comprising a polymerization repeating unit of Formula 3 with polyvinylphenol. As a result, excellent etching resistance can be secured although the photoresist patterns have a very small thickness. wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, a, b, c, d, e, f and g are as defined in the specification.
Claims22
A photoresist composition comprising:
- a photoresist polymer as a base resin;
- a photoacid generator;
- and
- an organic solvent;
- wherein the base resin comprises a photoresist polymer comprising a polymerization repeating unit of Formula 2:
- wherein R1, R2, R3 and R4 are individually hydrogen or methyl group;
- R5 and R6 are individually a linear or branched C1-C10 alkylene group;
- R7 is an acid labile protecting group;
- and
- a:b:c:d=20˜60 mol %:5˜20 mol %:3˜15 mol %:20˜50 mol %.
A photoresist composition comprising:
- a photoresist polymer as a base resin;
- a photoacid generator;
- and
- an organic solvent;
- wherein the base resin comprises polyvinylphenol and a photoresist polymer comprising a polymerization repeating unit of Formula 3:
- wherein R8, R9 and R10 are individually hydrogen or a methyl group;
- R11 is a linear or branched C1-C10 alkylene group;
- R12 is an acid labile protecting group;
- and
- e:f:g=30˜60 mol %:5˜25 mol %:30˜50 mol %.
Dependencies are inferred from the claim text.