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US 7,355,202 B2Granted
Thin-film transistor
AssigneeSemiconductor Energy
InventorsHongyong Zhang, Shunpei Yamazaki
Life of this patent
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Abstract
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor.
Claims12
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode;
- a semiconductor film comprising silicon formed over the gate electrode with the gate insulating film interposed there between, said semiconductor film including a channel formation region;
- and
- source and drain regions comprising silicon formed on said semiconductor film,
- wherein a peak position of a Raman spectrograph of said semiconductor film is lower than 520 cm−1.
3 more elements
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode;
- a semiconductor film comprising silicon formed over the gate electrode with the gate insulating film interposed there between, said semiconductor film including a channel formation region;
- and
- source and drain regions comprising silicon formed on said semiconductor film,
- wherein a peak position of a Raman spectrograph of said semiconductor film is lower than 520 cm−1 and said semiconductor film has a distortion in the lattice.
3 more elements
A semiconductor device comprising:
- a gate electrode formed over a substrate;
- a gate insulating film formed over the gate electrode;
- a semiconductor film comprising silicon formed over the gate electrode with the gate insulating film interposed therebetween, said semiconductor film including a channel formation region and
- source and drain regions comprising silicon formed on said semiconductor film,
- wherein a peak position of a Raman spectrograph of said semiconductor film is lower than 520 cm−1 and said semiconductor film has a distortion in the lattice, and the semiconductor film has no barrier against carriers at grain boundaries.
2 more elements
Dependencies are inferred from the claim text.