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US 7,354,482 B2Granted
Film deposition device
AssigneeShimadzu Corporation
InventorsYoshiyuki Konishi, Katsutoyo Osanai
Life of this patent
Estimating the term…
Abstract
A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time. A calculating device is electrically connected to the plasma quantity monitoring device for calculating a thickness of the film from the plasma quantity so that the thickness is monitored at real time.
Claims13
A film deposition device for depositing a film, comprising:
- a depositing chamber for depositing the film with plasma,
- a plasma quantity monitoring device disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time, and
- a calculating device electrically connected to the plasma quantity monitoring device configured to calculate a thickness of the film from the plasma quantity so that the thickness is monitored at real time,
- wherein said plasma quantity monitoring device includes a measuring device for measuring a quantity of electrons in the plasma and which comprises a Faraday cup that is disposed in the depositing chamber and so configured and arranged as to respond to electrons in the plasma and output a signal indicative thereof, the Faraday cup comprising an inner cylinder and a grounded outer cylinder, the inner cylinder being connected to a bias power source so as to be provided with a positive voltage from the bias power source.
1 more element
A film deposition apparatus for depositing a film, comprising:
- a depositing chamber for depositing the film with plasma,
- a plasma quantity monitoring device disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time, and
- a calculating device electrically connected to the plasma quantity monitoring device configured to calculate a thickness of the film from the plasma quantity so that the thickness is monitored at real time, wherein said plasma quantity monitoring device comprises a ring at an intermediate position between an incident port to the plasma entering the depositing chamber and a substrate on which the plasma is deposited, said ring crossing the plasma entering from the incident port,
- wherein the ring is arranged so that all of the plasma entering the depositing chamber passes through the ring, wherein the ring is connected with a positive voltage of a bias power source and wherein the depositing chamber is connected to ground.
1 more element
Dependencies are inferred from the claim text.