Vertical cavity surface emitting laser diode and process for producing the same
AssigneeFuji Xerox Co., Ltd.
InventorsNaotaka Mukoyama, Nobuaki Ueki
Life of this patent
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Abstract
A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.
Claims15
A vertical cavity surface emitting laser diode comprising:
- a lower semiconductor reflector;
- an active region;
- an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector;
- a metallic part being formed on the upper semiconductor reflector, and having a first aperture defining an output region of laser light generated in the active region;
- and
- a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light,
- wherein the upper semiconductor reflector has a contact layer in contact with the metallic part and a lenticular medium formed in a part of the contact layer, the lenticular medium having a convex surface toward the lower semiconductor reflector,
- wherein the contact layer has a thickness of from 50 to 500 nm at a part not in contact with the lenticular medium, and a thickness of 50 nm or less at a part in contact with the lenticular medium.
A vertical cavity surface emitting laser diode comprising:
- a lower semiconductor reflector;
- an active region;
- an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector;
- a metallic part being formed on the upper semiconductor reflector, and having a first aperture defining an output region of laser light generated in the active region;
- and
- a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light,
- wherein the upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector, the upper semiconductor reflector has a contact layer in contact with the metallic part, the lenticular medium is formed in a part of the contact layer, the contact layer comprises GaAs, and the vertical cavity surface emitting laser diode further comprises one of an AlAs layer and a GaInP layer immediately beneath the contact layer.
Dependencies are inferred from the claim text.