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US 7,352,637 B2Granted
Reference current generating circuit of nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorYasuhiko Honda
Life of this patent
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Abstract
A reference current generating circuit has a plurality of current mirror circuits each having a mirror ratio different from another one, and generates a plurality of reference currents based on a current that flows to the reference memory cells. A plurality of sense amplifiers detects a current that flows to a selected memory cell based on the reference currents generated by the reference current generating circuit.
Claims8
A nonvolatile semiconductor memory device, comprising:
- a sense amplifier in which a current flowing through a selected memory cell is supplied to one input end, and a current flowing through a reference memory cell is supplied to the other input end;
- a first transistor connected between the other input end of the sense amplifier and the reference memory cell;
- a second transistor, one end of which is connected to the other input end of the sense amplifier;
- a constant current source connected to the other end of the second transistor;
- and
- a third transistor, one end of which is connected to one input end of the sense amplifier, and the other end of which is connected between the first transistor and the reference memory cell;
- wherein the first transistor is turned OFF, and the second and third transistors are turned ON at the time of adjustment of the reference memory cell.
4 more elements
Dependencies are inferred from the claim text.