Circuit and method for generating boosted voltage in semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSoo-bong Chang, Chi-wook Kim
Life of this patent
Estimating the term…
Abstract
In a boosted voltage generating circuit of a semiconductor memory device, an active kicker drive signal generating circuit generates an active kicker drive signal having a first pulse duration in response to a row active command, and generates the active kicker drive signal having a second pulse duration in response to a refresh command. An active kicker circuit is responsive to the active kicker drive signal to generate the boosted voltage. The second pulse duration may be greater than the first pulse duration, which makes it possible to improve the pumping efficiency of the boosted voltage in a refresh operation.
Claims9
A circuit which generates a boosted voltage in a semiconductor memory device, comprising:
- an active kicker drive signal generating circuit which generates an active kicker drive signal having a first pulse duration in response to a row active command, and which generates the active kicker drive signal having a second pulse duration in response to a refresh command;
- and
- an active kicker generating circuit which generates the boosted voltage in response to the active kicker drive signal;
- wherein the second pulse duration is greater than the first pulse duration, and
- wherein the active kicker drive signal generating circuit comprises a first delay circuit and a second delay circuit which are selectively connected in series in response to the refresh command.
A method of generating a boosted voltage during a row activation operation and a refresh operation of a semiconductor memory device, wherein the boosted voltage is generated using a boosted voltage generating circuit which includes an active kicker circuit which generates the boosted voltage in response to an active kicker drive signal, the method comprising:
- generating the active kicker drive signal having a first pulse duration using a first delay circuit during the row activation operation and driving the active kicker circuit of the boosted voltage generating circuit in response to the active kicker drive signal having the first pulse duration;
- and
- generating the active kicker drive signal having a second pulse duration using the first delay circuit connected in series with a second delay circuit during the refresh operation and driving the active kicker circuit of the boosted voltage generating circuit in response to the active kicker drive signal having the second pulse duration, wherein the second pulse duration is greater than the first pulse duration.
A circuit which generates a boosted voltage in a semiconductor memory device, comprising:
- an active kicker drive signal generating circuit which receives an active command signal, a row active command signal, and a refresh command signal, and which generates an active kicker drive signal;
- and
- an active kicker generating circuit which generates the boosted voltage in response to the active kicker drive signal;
- wherein the active kicker drive signal is enabled in response to the active command signal,
- wherein an enabled pulse duration of the active kicker drive signal is a first pulse duration when the row active command signal is enabled, and a second pulse duration when the refresh command signal is enabled, and
- wherein the second pulse duration is greater than the first pulse duration.
Dependencies are inferred from the claim text.