Systems for continued verification in non-volatile memory write operations

A non-volatile memory system, comprising:

• a set of non-volatile storage elements;
• a plurality of bit lines, wherein each non-volatile storage element is in communication with one bit line of said set;
• managing circuitry in communication with said set of non-volatile storage elements and said plurality of bit lines, said managing circuitry programs said set of non-volatile storage elements in a process where each non-volatile storage element of said set is intended for programming to one of one or more target states, said managing circuitry applies a first voltage to a bit line of each non-volatile storage element that reaches a respective verify level corresponding to said target state to which it is intended to be programmed, said managing circuitry applies a second voltage to a bit line of each non-volatile storage element that reaches a respective verify level corresponding to said target state to which it is intended to be programmed and that is subsequently determined to no longer be at or above said respective verify level, said managing circuitry applies a third voltage to a bit line of each non-volatile storage element that has not yet reached a respective verify level corresponding to said target state to which it is intended to be programmed.

A non-volatile memory system, comprising:

• a first non-volatile storage element and a second non-volatile storage element;
• a first word line in communication with said first non-volatile storage element and said second non-volatile storage element;
• managing circuitry in communication with said first non-volatile storage element, said second non-volatile storage element, and said first word line, said managing circuitry performs one or more programming operations on said first non-volatile storage element and determines that said first non-volatile storage element has reached a verify voltage in response to said one or more programming operations, said managing circuitry inhibits further programming of said first non-volatile storage element in response to said determining and performs one or more programming operations on said second non-volatile storage element, said managing circuitry determines that said first non-volatile storage element is no longer at said verify voltage after performing said one or more programming operations on said second non-volatile storage element and in response, performs one or more additional programming operations on said first non-volatile storage element.