Electronic memory with binary storage elements
AssigneeIota Technology, Inc.
InventorIu-Meng Tom Ho
Life of this patent
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Abstract
An electronic memory using true and complementary dual bit lines and dual binary storage elements cell architecture comprising a memory cell pair with four binary storage elements with each memory cell pair capable of existing in up to sixteen electronic memory states. The four binary storage elements together, normally used to store two true and complementary data bits, are used to store two, three, or four data bits depending on the noise margin allowed and bit width selection. The memory can be ferroelectric memory FeRAM, a flash memory, a ROM, a dynamic memory DRAM, an OUM, a MRAM, a NAND memory, or a NOR memory.
Claims20
An electronic memory comprising:
- four bit lines and four binary storage elements, each of said binary storage elements connected or connectable to one of said bit lines;
- a write circuit for writing bits of data to said four binary storage elements wherein at least one of said data bits is used to determine the binary electronic memory states of all four binary storage elements;
- and
- a read circuit for reading data bits from said storage elements, wherein at least one data bit is determined by the binary electronic memory states of all four binary storage elements.
A method of operating an electronic memory, said method comprising:
- providing a memory having four bit lines and four binary storage elements, each of said binary storage elements connected or connectable to one of said bit lines;
- writing three bits of data to said four binary storage elements in a manner such that at least one of said data bits is used to determine the binary electronic memory states of all four binary storage elements;
- and
- reading three data bits from said storage elements in a manner such at least one data bit is determined by the binary electronic memory states of all four binary storage elements.
Dependencies are inferred from the claim text.