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AssigneeSamsung Electronics Co., Ltd.
InventorsSang-beom Kang, Du-eung Kim, Hyung-rok Oh, Kwang-jin Lee
Estimating the term…
A phase change random access memory on aspect includes a memory cell array block including a plurality of phase change memory cells, a column decoder, a row decoder, a column selector, and a write driver. The memory further includes a write boosting unit having a plurality of internal charge pumps which boost a first voltage to generate a write driving voltage which drives the write driver, where the number of internal charge pumps that are activated during a write operation is varied according to a number of phase change memory cells which are selected during the write operation. The memory still further includes a column boosting unit which boosts the first voltage to generate a column driving voltage which drives the column decoder, and a row boosting unit which boosts the first voltage to generate a row driving voltage which drives the row decoder.
A phase change random access memory comprising a memory cell array block including a plurality of phase change memory cells, a column decoder, a row decoder, a column selector, and a write driver, said memory further comprising:
A boosting charge pump, comprising:
A phase change random access memory comprising a plurality of charge pumps connected in parallel, wherein the number of charge pumps activated during a write operation is controlled in response to the number of phase change memory cells to which data is written.
A method of generating a write driving voltage for driving a write driver of a phase change random access memory comprising a plurality of charge pumps connected in parallel, comprising:
Dependencies are inferred from the claim text.