Systems and methods for reading and writing a magnetic memory device
AssigneeMacronix International Co., Ltd.
InventorChiaHua Ho
Life of this patent
Estimating the term…
Abstract
An MRAM cell comprises a magnetic metal layer and a magnetic sensing device in close proximity to the magnetic metal layer. One end of the magnetic metal layer is coupled with a word line transistor, while the other end of the magnetic metal layer is coupled to a first bit line. The magnetic sensing device can be coupled with a second bit line. The magnetic metal layer can be used to both program and read the cell, eliminating the need for a second current lien in the cell.
Claims20
A method for reading a nonvolatile memory device comprising a magnetic sensing device in close proximity to a magnetic metal layer, wherein the magnetic metal layer is not part of the magnetic sensing device, the method comprising:
- applying a voltage to turn-on a word line transistor coupled with one end of the magnetic metal layer;
- applying a voltage difference on the magnetic sensing device and the magnetic metal layer;
- and
- sensing a read current using a sensing amplifier coupled with one end of the magnetic sensing device.
A method for programming a nonvolatile memory device to a logic state comprising a magnetic sensing device in close proximity to a magnetic metal layer, wherein the magnetic metal layer is not part of the magnetic sensing device, the method comprising:
- applying a voltage to turn-on a word line transistor coupled with one end of the magnetic metal layer;
- and
- applying a voltage difference via a first bit line on the other end of the magnetic metal layer.
Dependencies are inferred from the claim text.