Composite integrated semiconductor device

A composite integrated semiconductor being connected to a plurality of inputting terminals of a semiconductor device at front of the input terminals, comprising:

• a plurality of inputting devices receiving an input electrical signal;
• a plurality of outputting devices transmitting an output electrical signal to the plurality of inputting terminals of a semiconductor device;
• a plurality of input surge/noise absorbing circuits to absorb surge or noise of the input electrical signal, each of the input surge/noise absorbing circuits being connected between respective ones of the inputting devices and corresponding outputting devices, each of the input surge/noise absorbing circuits including a first diode being connected between a power source line and the inputting device and a second diode being connected between the power source line and a ground respectively;
• a plurality of attenuating/level-shifting circuits to attenuate or level-shift the input electrical signal, each of the attenuating circuits being connected between respective ones of the inputting devices and corresponding outputting devices;
• and
• a plurality of electrical signal converting circuits to convert the input electrical signal to the output electrical signal, each of the electrical signal converting circuits being connected between respective ones of the inputting devices and corresponding outputting devices,
• wherein each inputting device, input surge/noise absorbing circuit, attenuating/level shifting-means circuit, electrical signal converting circuit, and outputting device comprise an integrated circuit, and
• wherein the integrated circuits are arranged in a line at each of the inputting terminals and the integrated circuits are formed in a semiconductor substrate.