Solid-state imaging device driving method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMakoto Inagaki, Yoshiyuki Matsunaga
Life of this patent
Estimating the term…
Loading patent…
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMakoto Inagaki, Yoshiyuki Matsunaga
Estimating the term…
Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
A method of driving a solid-state imaging device comprising:
Dependencies are inferred from the claim text.