Semiconductor device having plurality of circuits belonging to different voltage domains
AssigneeKabushiki Kaisha Toshiba
InventorsShinichiro Shiratake, Hiroyuki Hara
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AssigneeKabushiki Kaisha Toshiba
InventorsShinichiro Shiratake, Hiroyuki Hara
Estimating the term…
A first inverter circuit comprises a first transistor in which one end of a current path is grounded, and a second transistor in which one end of a current path is connected to the other end of the current path of the first transistor. A first signal is supplied to gates of the first and second transistors. A third transistor is connected between the other end of the current path of the second transistor and a node to which a second voltage higher than the first voltage is supplied. A control signal constituted of one of the ground potential and the second voltage is supplied to a gate of the third transistor behind a change of a first signal. A second signal constituted of one of the ground potential and the second voltage is output from an output terminal of the first inverter circuit.
A level conversion circuit comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.