Semiconductor devices having amorphous silicon-carbon dielectric and conducting layers
AssigneeNanodynamics, Inc.
InventorBenjamin F. Dorfman
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Abstract
A method for fabricating a semiconductor device having a plurality of layers, depositing a first layer comprising a medium-k dielectric barrier layer on one of the plurality of layers, depositing a second layer comprising a low-k dielectric layer on the first layer, and depositing a third layer comprising a medium-k dielectric barrier on the second layer.
Claims9
A semiconductor device having a plurality of layers, including a low-k dielectric layer and medium-k dielectric layers, wherein the low-k dielectric layer is positioned between the medium-k dielectric layers, and the low-k dielectric layer and the medium-k dielectric layers comprise a stabilized synergetic carbon.
Dependencies are inferred from the claim text.