Semiconductor structure that includes a cooling structure formed on a semiconductor surface and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor chip having first and second surfaces facing each other, and third and fourth surfaces facing each other and adjoining said first and second surfaces;
• a first sealing resin being formed over said first surface;
• a second sealing resin being formed over said second surface;
• a first insulation film being formed on said second surface;
• a second insulation film being formed on said third surface;
• a third insulation film being formed on said fourth surface;
• a cooling structure having
• a first conductive layer being formed on said first insulation film,
• an n-type semiconductor being formed on said first conductive layer and having an exposed n-type semiconductor end being exposed from said second sealing resin,
• a p-type semiconductor being formed on said first conductive layer and having an exposed p-type semiconductor end being exposed from said second sealing resin,
• a second conductive layer contacting said exposed n-type semiconductor end,
• a third conductive layer contacting said exposed p-type semiconductor end,
• first and second electrode pads being formed on said first sealing resin,
• a fourth conductive layer being formed on said second insulation film and electrically connecting said second conductive layer and said first electrode pad,
• a fifth conductive layer being formed on said third insulation film and electrically connecting said third conductive layer and said second electrode pad, and
• spherical electrodes being formed on said first and second electrode pads.

A method of manufacturing a semiconductor device comprising:

• preparing a semiconductor wafer having first and second surfaces;
• forming a first conductive layer on the first surface;
• forming an n-type semiconductor on the first conductive layer;
• forming a p-type semiconductor on the first conductive layer;
• forming a sealing resin over the first surface;
• exposing one end of the n-type semiconductor from the sealing resin;
• exposing one end of the p-type semiconductor from the sealing resin;
• forming a second conductive layer contacting the exposed end of the n-type semiconductor;
• forming a third conductive layer contacting the exposed end of the p-type semiconductor;
• forming a first electrode pad integrally with the second conductive layer;
• forming a second electrode pad integrally with the third conductive layer;
• and
• forming spherical electrodes on the first and second electrodes.

A method of manufacturing a semiconductor device comprising:

• preparing a semiconductor chip having first and second surfaces facing each other, and third and fourth surfaces facing each other and adjoining the first and second surfaces;
• forming a first sealing resin over the first surface;
• forming a first insulation film on the second surface;
• forming a first conductive layer on the first insulation film;
• forming an n-type semiconductor on the first conductive layer;
• forming a p-type semiconductor on the first conductive layer;
• forming a second sealing resin over the second surface;
• exposing one end of the n-type semiconductor from the second sealing resin;
• exposing one end of the p-type semiconductor from the second sealing resin;
• forming first and second through holes penetrating the semiconductor chip, the first sealing resin and the second sealing resin;
• forming a second insulation film on the inner wall of the first through hole;
• forming a third insulation film on the inner wall of the second through hole;
• forming a second conductive layer contacting the exposed end of the n-type semiconductor;
• forming a third conductive layer contacting the exposed end of the p-type semiconductor;
• forming first and second electrode pads on the first sealing resin;
• forming a fourth conductive layer covering the surface of the second insulation film inside the first through hole, the fourth conductive layer connecting the second conductive layer and the first electrode pad;
• forming a fifth conductive layer covering the surface of the third insulation film inside the second through hole, the fifth conductive layer connecting the third conductive layer and the second electrode pad;
• and
• forming spherical electrodes at the first and second electrode pads, respectively.