Multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring substrate
AssigneeShinko Electric Industries Co., Ltd.
InventorsNoriyoshi Shimizu, Tomoo Yamasaki, Akio Rokugawa, Takahiro Iijima
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Abstract
A multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring structure is disclosed. The multilayer wiring substrate includes a dielectric layer including a resin material mixed with an inorganic filler, wherein the inorganic filler is fabricated by mixing a paraelectric filler with an inorganic filler having a high dielectric constant.
Claims14
A multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring structure, the multilayer wiring substrate comprising:
- a dielectric layer including a resin material mixed with an inorganic filler;
- wherein the inorganic filler is fabricated by mixing a paraelectric filler with an inorganic filler having a high dielectric constant;
- wherein the paraelectric filler has a temperature coefficient that is a negative value or a temperature coefficient that is no more than 100 ppm/° C. and
- the paraelectric filler is selected from the group consisting of 2MgO·SiO2—SrO—BaO—TiO2, La2O3·2TiO3, Bi2O3·2TiO2, CaTiO3—La3O3—TiO2, SrTiO3—CaTiO3, BaTiO3—SrTiO3—La2O3—TiO2, and admixtures thereof.
A capacitor structure comprising:
- a dielectric layer including
- a resin material;
- the paraelectric filler selected from the group consisting of 2MgO·SiO2—SrO—BaO—TiO2, La2O3—2TiO3, Bi2O3·2TiO2, CaTiO3—La3O3—TiO2, SrTiO3—CaTiO3, BaTiO3—SrTiO3—La2O3—TiO2, and admixtures thereof;
- and
- a high dielectric constant inorganic filler,
- wherein relative amounts of the paraelectric filler and the high dielectric constant inorganic filler are configured to reduce a change in capacitance as a function of temperature of the dielectric layer, whereby the capacitor structure having a relatively constant capacitance as a function of temperature.
A capacitor structure comprising:
- a dielectric layer including
- a resin material wherein the resin material is selected from the group consisting of epoxy resin, polyimide resin, BT (bismaleimide Triazine) resin, and PPE (polyphenylene-ether) resin;
- a paraelectric filler selected from the group consisting of 2MgO·SiO2—SrO—BaO—TiO2, La2O3·2TiO3, Bi2O3·2TiO2, CaTiO3—La3O3—TiO2, SrTiO3—CaTiO3, BaTiO3—SrTiO3—La2O3—TiO2, and admixtures thereof;
- and
- a high dielectric constant inorganic filler wherein the high dielectric constant inorganic filler is selected from the group consisting of barium titanate, lead zirconate titanate, strontium titanate, and admixtures thereof,
- wherein relative amounts of the parselectric filler and the high dielectric constant inorganic filler are configured to reduce a change in capacitance as a function of temperature of the dielectric layer, whereby the capacitor structure has a relatively constant capacitance as a function of temperature;
- an upper electrode formed above the dielectric layer;
- and
- a lower electrode formed below the dielectric layer.
Dependencies are inferred from the claim text.