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US 7,352,053 B2Granted
Insulating layer having decreased dielectric constant and increased hardness
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHui Lin Chang
Life of this patent
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Abstract
A method of manufacturing a mechanically robust insulating layer, including forming a low-k dielectric layer having a first dielectric constant on a substrate and forming a carbon nitride cap layer on the low-k dielectric layer, the insulating layer thereby having a second dielectric constant that is less than the first dielectric constant.
Claims20
An integrated circuit device, comprising:
- a substrate having at least one microelectronic device located therein;
- and
- an insulating layer located over the substrate, including:
- a thin-film, low-k dielectric layer having a first dielectric constant;
- and
- a carbon nitride cap layer located on the low-k dielectric layer, wherein the carbon nitride cap layer has a second dielectric constant that is less than the first dielectric constant, such that the insulating layer has a third dielectric constant that is less than the first dielectric constant.
3 more elements
An integrated circuit device, comprising:
- a first via contacting a microelectronic device in a substrate and extending through a first insulating layer located over the substrate;
- a first trench contacting the first via and extending through a second insulating layer located over the first insulating layer;
- a second via contacting the first trench and extending through a third insulating layer located over the second insulating layer;
- and
- a second trench contacting the second via and extending through a fourth insulating layer located over the third insulating layer;
- wherein at least one of the first, second, third and fourth insulating layers includes:
- a dielectric layer having a first dielectric constant;
- and
- a carbon nitride cap layer located on the dielectric layer, the carbon nitride cap layer having a second dielectric constant that is less than the first dielectric constant such that the at least one of the first, second, third and fourth insulating layers thereby has a third dielectric constant that is less than the first dielectric constant.
6 more elements
An integrated circuit apparatus, comprising:
- a microelectronic device located at least partially in a substrate;
- a dielectric first layer having a first dielectric constant and a first hardness;
- and
- a second layer comprising carbon nitride and having a second dielectric constant and a second hardness, wherein:
- one of the first and second layers interposes the substrate and the other of the first and second layers;
- an aggregate dielectric constant of the first and second layers is less than the first dielectric constant;
- and
- an aggregate hardness of the first and second layers is greater than the first hardness.
5 more elements
A MEMs device, comprising:
- a landing yoke configured to deflect in response to biasing thereof;
- a mirror element coupled to the landing yoke;
- and
- a control bus configured to bias the landing yoke;
- wherein at least one of the landing yoke, mirror element and control bus includes a contact area coated with carbon nitride having a composition of CxNy, where x ranges between 0.1 and 0.9 and y ranges between about 0.1 and 0.9;
- wherein a tip of the landing yoke is configured to contact the control bus in response to deflection of the landing yoke;
- and
- wherein the tip is coated with carbon nitride.
5 more elements
A MEMs device, comprising:
- a landing yoke configured to deflect in response to biasing thereof;
- a mirror element coupled to the landing yoke;
- and
- a control bus configured to bias the landing yoke;
- wherein at least one of the landing yoke, mirror element and control bus includes a contact area coated with carbon nitride having a composition of CxNy, where x ranges between 0.1 and 0.9 and y ranges between about 0.1 and 0.9;
- wherein a mirror support post interposes the mirror element and the landing yoke;
- and
- wherein the mirror support post includes a sidewall ring spacer comprising carbon nitride.
5 more elements
Dependencies are inferred from the claim text.