Back to results
US 7,352,046 B2Granted
Semiconductor integrated circuit device
AssigneeSeiko Instruments Inc.
InventorJun Osanai
Life of this patent
Estimating the term…
Abstract
A semiconductor integrated circuit device has a first MOS transistor having an insulating film, a first source, a first gate electrode, and a nitride film overlapping the first gate electrode from the first source through the insulating film. A second MOS transistor has a second source and a second gate electrode but does not have a nitride film overlapping the second gate electrode from the second source.
Claims20
A semiconductor integrated circuit device, comprising:
- a first MOS transistor having an insulating film, a first source, a first non-floating gate electrode, and a nitride film overlapping the first non-floating gate electrode from the first source through the insulating film for controlling a threshold voltage of the first MOS transistor by inhibiting hydrogen diffusion in an overlap region of the first non-floating gate electrode and the first source;
- and
- a second MOS transistor having a second source and a second non-floating gate electrode and without a nitride film overlapping the second non-floating gate electrode from the second source.
A semiconductor integrated circuit device comprising:
- a first MOS transistor having a first source, a first non-floating gate electrode, and a nitride film overlapping the first source and the first non-floating gate electrode for controlling a threshold voltage of the first MOS transistor by inhibiting hydrogen diffusion in an overlap region of the first non-floating gate electrode and the first source;
- and a second MOS transistor having a second source and a second non-floating gate electrode.
A semiconductor integrated circuit device comprising:
- a first MOS transistor having a first source, a first non-floating gate electrode, and a plurality of nitride films overlapping the first source and the first non-floating gate electrode for controlling a threshold voltage of the first MOS transistor by inhibiting hydrogen diffusion in an overlap region of the first non-floating gate electrode and the first source;
- and a second MOS transistor having a second source and a second non-floating gate electrode.
Dependencies are inferred from the claim text.