Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates

A SiC semiconductor device comprising:

• a semiconductor substrate comprising silicon carbide having a first surface and a second surface, the substrate including a first doped region adjacent the first surface;
• a first conductive layer comprising a first contact metal layer on the first surface to form a first contact having an electronic interface to the first doped region, the first conductive layer including:
• a titanium carbide (TiC) layer contacting the second surface;
• a tungsten carbide (WC) layer covering the titanium carbide (TiC) layer;
• and
• a layer consisting essentially of elemental tungsten contacting the tungsten carbide (WC) layer;
• and
• an encapsulating insulative coating layer formed onto at least one of the first and second major surface of said silicon carbide-containing semiconductor substrate which protects said semiconductor device from mechanical degradation and from thermal degradation at temperatures above at least about 1000° C.

A packaged SiC device which comprises:

• a SiC die having a silicon carbide-containing layer;
• a contact forming an electrical connection to an electronic device formed by at least one doped region in the SiC die, the contact comprising an electrically transparent diffusion barrier (ETDB) on the silicon carbide containing layer;
• a package substrate comprising a layer of SiC/AIN;
• a metal conductor on the package substrate connected to the contact;
• and
• a borosilicate glass layer adhering and interfacing the SiC die to the package substrate.