Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film
AssigneesTDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
InventorsHiroshi Yamada, Hisao Morooka, Kazuo Nishi
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AssigneesTDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
InventorsHiroshi Yamada, Hisao Morooka, Kazuo Nishi
Estimating the term…
A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.
A photoelectric transducer comprising a first pin junction part including:
A photoelectric transducer apparatus comprising:
An iron silicide film for constructing an i-layer in a pin junction;
Dependencies are inferred from the claim text.