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US 7,352,037 B2Granted
Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-joo Kim, Suk-pil Kim, Yoon-dong Park, Eun-Hong Lee, Jae-woong Hyun, Jung-hoon Lee, Sung-jae Byun
Life of this patent
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Abstract
A semiconductor device may include at least one pair of fins on a semiconductor substrate. A channel region may be formed in each fin. The semiconductor device may further include a gate electrode corresponding to each pair of channel regions, a source contact plug electrically connected to each of at least one source formed on a respective fin concurrently, and a drain contact plug electrically connected to each of at least one drain formed on a respective fin concurrently.
Claims21
A semiconductor device comprising:
- a semiconductor substrate including a body and at least one pair of fins spaced from each other and protruding from the body;
- at least one source and at least one drain formed in each fin of the at least one pair of fins, within each fin, the at least one source being spaced apart from a corresponding drain along the direction in which the pair of fins extends;
- a channel region formed at least near the surfaces of an inner side of each fin, each channel region connecting a corresponding one of the at least one sources to a corresponding one of the at least one drains;
- a gate electrode including a first portion arranged between the channel regions formed at least near the inner sides of each fin, and being insulated from the semiconductor substrate;
- at least one source contact plug insulated from the body and electrically connected to the at least one sources on each fin concurrently;
- and
- at least one drain contact plug insulated from the body and electrically connected to the at least one drains on each fin concurrently.
4 more elements
Dependencies are inferred from the claim text.