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US 7,352,035 B1Granted
Flash memory devices and methods for fabricating flash memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJai-Hyuk Song, Jeong-Hyuk Choi, Ok-Cheon Hong
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Abstract
A flash memory device includes a cell string having a plurality of cell transistors connected in series, and a string selection transistor and a ground selection transistor connected to both ends of the cell string, respectively, wherein the cell transistor has a channel impurity concentration higher than a channel impurity concentration of at least one of the string selection transistor and the ground selection transistor.
Claims20
A flash memory device, comprising:
- a cell string having a plurality of cell transistors connected in series;
- and
- a string selection transistor and a ground selection transistor connected to both ends of the cell string, respectively,
- wherein the cell transistor has a channel impurity concentration higher than a channel impurity concentration of at least one of the string selection transistor and the ground selection transistor.
1 more element
A method for fabricating a flash memory device, the method comprising:
- forming a cell string having a plurality of cell transistors connected in series, and a string selection transistor and a ground selection transistor connected to both ends of the cell string, respectively, on a semiconductor substrate;
- and
- implanting a channel impurity on the semiconductor substrate having the cell transistor, the string selection transistor, and the ground selection transistor,
- wherein the cell transistor has a channel impurity concentration higher than an impurity concentration of at least one of the string selection transistor and the ground selection transistor.
1 more element
Dependencies are inferred from the claim text.