US 7,352,023 B2 · Constructions comprising hafnium oxide

Abstract

The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

Claims15

Dependent claims

A DRAM construction comprising:

a semiconductor substrate;
a first capacitor electrode over the semiconductor substrate;
a second capacitor electrode over the first capacitor electrode;
a dielectric material between the first and second capacitor electrodes;
an entirety of the dielectric material between the first and second electrodes consisting essentially of crystalline hafnium oxide having a non-monoclinic crystallographic orientation;
a field effect transistor having a gate over the semiconductor substrate and a pair of source/drain regions proximate the gate;
and
wherein the first capacitor electrode is in electrical contact with one of the source/drain regions of said pair of source/drain regions.

5 more elements

Dependencies are inferred from the claim text.

Constructions comprising hafnium oxide

Life of this patent

Constructions comprising hafnium oxide

Life of this patent

Abstract

Claims15